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NE
W
Central
CMST2907A
DESCRIPTION:
TM
Semiconductor Corp.
SUPER-MINI PNP SILICON TRANSISTOR
SUPER mini
TM
The CENTRAL SEMICONDUCTOR CMST2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general purpose and switching applications.
SOT-323 CASE
MAXIMUM RATINGS: (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA UNITS V V V mA mW oC oC/W
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
60 60 5.0 600 250 -65 to +150 500
ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125oC VCE=30V, VBE=0.5V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA MIN MAX 10 10 50 UNITS nA A nA V V V V V V V
60 60 5.0 0.4 1.6 1.3 2.6 75 100
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SYMBOL hFE hFE hFE fT Cob Cib ton td tr toff ts tf
TEST CONDITIONS VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA
MIN 100 100 50 200
MAX 300
UNITS
8.0 30 45 10 40 100 80 30
MHz pF pF ns ns ns ns ns ns
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2 R1
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